produk> > IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket
IR Phototransistor Ngaliwatan Hole 2-Pin Paket

IR Phototransistor Ngaliwatan Hole 2-Pin Paket

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    • Type pamayaran: T/T,Paypal
    • Incoterm: FOB,EXW,FCA
    • Mnt. pesenan: 5000 Piece/Pieces
    • kandaraan: Ocean,Land,Air
    • palabuhan: SHENZHEN
    Kamampuhan Suplai & Émbaran Tambahan
    Additional Information

    bungkusankotak karton

    kakuwatan keur ngasilkeun1000000000 pcs/week

    kandaraanOcean,Land,Air

    Tempat AsalCina

    Kamampuhan suplai7000000000 pcs/week

    SertipikatGB/T19001-2008/ISO9001:2008

    Kode HS8541401000

    palabuhanSHENZHEN

    Type pamayaranT/T,Paypal

    IncotermFOB,EXW,FCA

    Atribut Produk

    Model No.3106PT850D-A3

    merekLED pangalusna

    PerasaiPabrikan aslina

    Bahan Rujukanlembar data

    JenisLED

    NgetikNgaliwatan liang

    CertificationOther

    UsageOther

    ApplicationElectronic Products

    Luminous IntensityHigh Directivity

    ColorOther

    FormationGold Thread

    TypeInfrared Led

    Inner PackingAnti-Static Bag

    PolarityShort Pin Mark Cathode

    Range Of Spectral Bandwidth700-1100nm

    Type Of LensBlack Lens

    Collector-Emitter Voltage30v

    Emitter-Collector Voltage5v

    Wavelenghth Of Peak Sensitivity850nm

    Package Quantity1000pcs/Bag

    Half Sensitivity Angle60degree

    1000PCS Weight200g

    Bungkusan & Pangiriman
    Ngical Unit: Piece/Pieces
    Jenis Paket: kotak karton
    parusahaan Video
    Ketik liwat-liang LED salaku strip gulungan
    Panjelasan Produk

    IR panarima 3162PT850D-A3


    Naon bédana antara kinerja photodiodes sareng phototransistor?

    1. Phototransistor bisa dianggap salaku struktur terpadu photodiode jeung transistor. Karakteristikna nyaéta karakteristik kaluaran fotodioda sareng karakteristik transistor.
    2. Photodiodes bisa dipaké salaku tegangan atawa sumber arus (ie photovoltaic sél) tanpa catu daya tambahan.
    3. phototransistor kudu dioperasikeun ku catu daya éksternal, meh bisa kaluaran arus jauh leuwih badag batan photodiode nu, sabab geus amplified ku transistor nu.

    850nm ir LED

    - Size: 

    - Chip Number: 1 chips

    - Color: 850nm 

    - Type: Black  clear

    - Chip brand: Tyntek

    - 60 degree

    - Different color are available

    - Different wavelength are available

    - Warranty: 5 Years

    - RoHS, REACH, EN62471

    - Uniform light output

    - Long life-solid state reliability

    - Low Power consumption

    -Anti UV epoxy resin package

    -High temperature resistance






    - Ukuran 3 mm IR Ngaliwatan-liang LED -

    IR LED

    * Kasus ieu ogé sayogi pikeun LED anu sanés, sapertos: 5mm héjo ngaliwatan-liang LED, UV LED, 660nm LED, 940nm LED, 5mm biru ngaliwatan-liang LED, konéng LED, Amber LED ect *

    - Ngaliwatan-liang IR LED -

    PT850 led

    * Warna dina poto dicandak ku kaméra, mangga nyandak warna emitting sabenerna salaku standar.

    - Parameter LED IR liang ngaliwatan -

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Condition

    Collector-Emitter Voltage

    VCEO

    30 V

    Emitter-Collector Voltage

    VECO

    5 V

    Collector Dark Current

    ICEO


    100

    nA

    VCE=20V

    Ee=0mw/cm2

    Collector-Emitter

    Breakdown Voltage

    Bvceo

    30

    100

    V

    ICBO=100uA

    Ee=0mw/cm2

    Emitter-Collector

    Breakdown Voltage

    Bvceo

    6


    V

    IECO=10uA

    Collector-Emitter

    Saturation Voltage

    VCE(sat)


    0.4

    V

    IC=2mA

    IB=100uA

    Ee=1mw/cm2

    Photocurrent 1

    IPCE

    30


    90

    uA

    Vce=5V

    Ee=1mw/cm2

    λP=850nm

    Photocurrent 2

    IPCE 90
    270 uA

    VCE=5V

    Ee=1mw/cm2

    λP=940nm

    Current gain

    hFE

    270


    900

    uA

    VCE=5V

    IC=2mA

    Wavelenghth of Peak Sensitivity

    λP 850


    nm


    Range of Spectral Bandwidth

    λ0.5

    400


    1100

    nm


    Response Time-Rise Time

    tR

    15

    us

    Vce=5v

    Ic=1mA

    RL=1000Ω

    Response Time-Fall Time

    tF
    15
    us

    Half Sensitivity angle

    △λ

    ±10

    deg

    Collector-base Capacitance

    CCB

    8 PF F=1MHz,VCB=3V

    - Sambungan kawat emas -

    infrared led

    * Dina raraga ngajaga unggal salah sahiji umur panjang LED urang, BestLED pabrik ngagunakeun kawat emas murni tinggi pikeun sambungan circuit jero.

    - IR LED Bungkusan -

    infrared LED packaged

    * Urang tiasa ngabungkus LED ieu kalayan sajumlah bungkusan sareng taped atanapi ngabengkokkeun pin LED salaku sarat anjeun.

    - Patali LED Infrabeureum -

    IR LED

    - Prosés Produksi -

    LED LAMP

    - T hrough-liang IR LED -

    Through -hol led

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